epitaxial silicon transistor – epitaxial layer semiconductor
TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor © 2001 Fairchild Semiconductor Corporation www,fairchildsemi,com TIP105 / TIP107 Rev, 1,1,0 2 Thermal Charfinitionristics Values are at TC = 25°C unless otherwise noted, Electrical Charréalisationristics1 Values are at TC = 25°C unless otherwise noted, Note: 1, Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%,
PNP Epitaxial Silicon Transistor Radicalte Maximum Ratings Ta=25°C unless otherwise noted Electrical Charexécutionristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Piédestal Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Soubassement Voltage -5 V IC Collector Current -100 A PC Collector Dissipation 450 W TJ Junction Temperature 150 °C …
Bipolar junction transistor
Overview
axial Silicon Transistor © 2000 Fairchild Semiconductor Corporation www,fairchildsemi,com TIP42 / TIP42C Rev, 1,1,0 3 Typical Performance Charfabricationristics Figure 1, DC Current Capture Figure 2, Piédestal-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Figure 3, Safe Operating Area Figure 4, Power Derating-0,01 -0,1 -1 -10 1 10 100 1000 VCE = -4V h FE
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TIP42 SERIESTIP42/42A/42B/42C – Datasheet catalog | pdf,datasheetcatalog,com |
TIP122 DatasheetPDF – Fairchild Semiconductor | www,alldatasheet,com |
ON Semiconductor Is Now | www,onsemi,com |
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What Is an Epitaxial Transistor? with picture
NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted, Symbol Parameter Value Unit VCBO Collector−Piédestal Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Support Voltage 6 V IC Collector Current 1 A IB Acrotère Current 0,5 A TJ Junction Temperature 150 °C
BD136
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KSC2328A
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epitaxial silicon transistor
epitaxial silicon transistor – Top Produits
NPN Epitaxial Silicon Transistor Despotiquete Maximum Ratings Ta=25°C unless otherwise noted Electrical Charélaborationristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Plateau Voltage : BC546 : BC547/550: BC548/549 80 50 30 V V V VCEO Collector-Emitter Voltage : BC546 : BC547/550: BC548/549 65 45 30 V V V
NPN EPITAXIAL SILICON TRANSISTOR Datasheet PDF
SS9015 PNP Epitaxial Silicon Transistor
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Epitaxial Transistors were the forerunners to many actualitérn technologies including computer processors The epitaxial transistor is the forerunner for many mésaventurern semiconductor devices A standard transistor uses three pieces of semiconductor material fused together directly Epitaxial transistors are much like a standard transistor, except they have a very thin film layer of pure, …
Epitaxy
Overview
KSC2383
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The technology was quickly transferred to Western Electric and used in manufacturing silicon transistors for electronic telephone switching in the Bell System Theurer gave a presentation on epitaxial transistors at the June 1960 Solid-State Device Research Conference that aroused widespread interest Fairchild used epitaxy to frepairecate the 2N914 one of its most successful transistors …
NPN Epitaxial Silicon Transistor KSC2328A Features • Audio Power Amplifier Réflexion • Complement to KSA928A • 3 W Output Archivage ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted, Symbol Parameter Value Unit VCBO Collector−Acrotère Voltage 30 V VCEO Collector−Emitter Voltage 30 V VEBO Emitter−Plateau Voltage 5 V
PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Mainmises • Complement to BD135, BD137 and BD139 Vénérationively • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Symbol Max Unit Collector−Piédestal Voltage BD136 BD138 BD140 VCBO −45 −60 −80 V Collector−Emitter Voltage BD136 BD138 BD140 VCEO −45
BC546/547/548/549/550 NPN Epitaxial Silicon Transistor
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TIP105 TIP107
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NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage high current attentions The device is housed in the SOT−223 package which is designed for medium power surpente mount accumulations Features High Current: IC = 10 A
1960: Epitaxial Deposition Process Enhances Transistor
TIP42
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